Description: 2SK2850 N -Channel Mosfet
2SK2850 2SK-2850 K2850 2850 MOSFET 6A 900V 125W TO-3P Field Effect Transistor Silicon N-Channel Power MOSFET Transistor
Specification:
- Type Designator: 2SK2850-01
- Type of 2SK2850-01 transistor: MOSFET
- Type of control channel: N -Channel
- Maximum power dissipation (Pd), W: 125
- Maximum drain-source voltage |Uds|, V: 900
- Maximum gate-source voltage |Ugs|, V: 30
- Maximum drain current |Id|, A: 6
- Maximum junction temperature (Tj), °C: 150
- Rise Time of 2SK2850-01 transistor (tr), nS: 50
- Drain-source Capacitance (Cd), pF: 140
- Maximum drain-source on-state resistance (Rds), Ohm: 1.87
- Type Designator: 2SK2850-01
- Type of 2SK2850-01 transistor: MOSFET
- Type of control channel: N -Channel
- Maximum power dissipation (Pd), W: 125
- Maximum drain-source voltage Uds, V: 900
- Maximum gate-source voltage Ugs, V: 30
- Maximum drain current Id, A: 6
- Maximum junction temperature (Tj), °C: 150
- Rise Time of 2SK2850-01 transistor (tr), nS: 50
- Drain-source Capacitance (Cd), pF: 140
- Maximum drain-source on-state resistance (Rds), Ohm: 1.87
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