2SK2850 MOSFET Transistor K2850 Transistor 6A 900V 125W TO-3P 3 Pin Leads Transistor N-Channel MOSFET Transistor


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  • Type Designator: 2SK2850-01
  • Type of 2SK2850-01 transistor: MOSFET
  • Type of control channel: N -Channel
  • Maximum power dissipation (Pd), W: 125
  • Maximum drain-source voltage Uds, V: 900
  • Maximum gate-source voltage Ugs, V: 30
  • Maximum drain current Id, A: 6
  • Maximum junction temperature (Tj), °C: 150
  • Rise Time of 2SK2850-01 transistor (tr), nS: 50
  • Drain-source Capacitance (Cd), pF: 140
  • Maximum drain-source on-state resistance (Rds), Ohm: 1.87



Description: 2SK2850 N -Channel Mosfet

2SK2850 2SK-2850 K2850 2850 MOSFET 6A 900V 125W TO-3P Field Effect Transistor Silicon N-Channel Power MOSFET Transistor

Specification:

  • Type Designator: 2SK2850-01
  • Type of 2SK2850-01 transistor: MOSFET
  • Type of control channel: N -Channel
  • Maximum power dissipation (Pd), W: 125
  • Maximum drain-source voltage |Uds|, V: 900
  • Maximum gate-source voltage |Ugs|, V: 30
  • Maximum drain current |Id|, A: 6
  • Maximum junction temperature (Tj), °C: 150
  • Rise Time of 2SK2850-01 transistor (tr), nS: 50
  • Drain-source Capacitance (Cd), pF: 140
  • Maximum drain-source on-state resistance (Rds), Ohm: 1.87






  • Type Designator: 2SK2850-01
  • Type of 2SK2850-01 transistor: MOSFET
  • Type of control channel: N -Channel
  • Maximum power dissipation (Pd), W: 125
  • Maximum drain-source voltage Uds, V: 900
  • Maximum gate-source voltage Ugs, V: 30
  • Maximum drain current Id, A: 6
  • Maximum junction temperature (Tj), °C: 150
  • Rise Time of 2SK2850-01 transistor (tr), nS: 50
  • Drain-source Capacitance (Cd), pF: 140
  • Maximum drain-source on-state resistance (Rds), Ohm: 1.87
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