Description: SMD BSS138

These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

The Features of BSS138:

Logic Level N-Channel MOSFET with low on-state resistanceContinuous Drain Current (ID) is 200mADrain Source Voltage (VDS) is 50VOn-state Resistance is 3.5ΩMinimum Gate threshold voltage (VGS-th) is 0.5VMaximum Gate threshold voltage (VGS-th) is 1.5VTurn ON and Turn off time is 20ns eachAvailable in SOT23 SMD package

The application of BSS138:

Low current and Low Voltage switching applicationsLogic Level ShiftersDC-DC convertsMobility applicationsApplication where low on-state resistance is required.

Power management applications

Mechanical Data:-

Case: SOT-23, Plastic Package

Terminals: Solderable per MIL-STD-202G, Method 208

Weight: 0.008 gram

The description of Pin Configuration:

BSS138 has three pins, which are Source, Gate, and Drain. They correspond to different functions. For specific description about BSS138 pin, please refer to BSS138 datasheet. You can free download

BSS138 Pdf at the end of the article.

• Logic Level N-Channel MOSFET with low on-state resistance
• Continuous Drain Current (ID) is 200mA
• Drain Source Voltage (VDS) is 50V
• On-state Resistance is 3.5
• Minimum Gate threshold voltage (VGS-th) is 0.5V
• Maximum Gate threshold voltage (VGS-th) is 1.5V
• Turn ON and Turn off time is 20ns each
• Available in SOT23 SMD package