Description: 40G120WD MOSFET 40G120WD Transistor

40G120WD MOSFET 40G120WD Transistor TO247 3 Pin Leads 40A 1200V Power MOSFET 40G120 IGBT 40G120 Transistor IC Electric Welding Machine IGBT Field Effect Transistor 1200V IGBT

Specifications:

• Type of IGBT Channel: N-Channel
• Maximum Power Dissipation (Pc), W: 340
• Maximum Collector-Emitter Voltage |Vce|, V: 1200
• Collector-Emitter saturation Voltage |Vcesat|, V: 1.8
• Maximum Gate-Emitter Voltage |Veg|, V: 20
• Maximum Collector Current |Ic|, A: 40
• Maximum Junction Temperature (Tj), °C: 175
• Rise Time, nS: 60
• Maximum Collector Capacity (Cc), pF: 130
• Package: TO247

Note:

• Light shooting and different displays may cause the color of the item in the picture a little different from the real thing. The measurement allowed error is +/- 1-3cm.

• Maximum Power Dissipation (Pc), W: 340
• Maximum Collector-Emitter Voltage |Vce|, V: 1200
• Collector-Emitter saturation Voltage |Vcesat|, V: 1.8
• Maximum Gate-Emitter Voltage |Veg|, V: 20
• Maximum Collector Current |Ic|, A: 40
• Maximum Junction Temperature (Tj), °C: 175
• Rise Time, nS: 60
• Maximum Collector Capacity (Cc), pF: 130