Picture of 50T65SQD 50T65 IGBT 50A 650V 50T65SQD IGBT Transistor TO-247 Switching Power N-Channel 650V Transistor MOSFET 2 Pin Leads IC 50T65SQD Transistor
Picture of 50T65SQD 50T65 IGBT 50A 650V 50T65SQD IGBT Transistor TO-247 Switching Power N-Channel 650V Transistor MOSFET 2 Pin Leads IC 50T65SQD Transistor
Picture of 50T65SQD 50T65 IGBT 50A 650V 50T65SQD IGBT Transistor TO-247 Switching Power N-Channel 650V Transistor MOSFET 2 Pin Leads IC 50T65SQD Transistor
Picture of 50T65SQD 50T65 IGBT 50A 650V 50T65SQD IGBT Transistor TO-247 Switching Power N-Channel 650V Transistor MOSFET 2 Pin Leads IC 50T65SQD Transistor

50T65SQD 50T65 IGBT 50A 650V 50T65SQD IGBT Transistor TO-247 Switching Power N-Channel 650V Transistor MOSFET 2 Pin Leads IC 50T65SQD Transistor

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SKU: UDBD06726
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  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5uS
  • Designed for :
  • – Frequency Converters
  • – Uninterrupted Power Supply
  • TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
  • – very tight parameter distribution
  • – high ruggedness, temperature stable behavior
  • – very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1
  • for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models

Call For Order : 09613-800800

Description: FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT

FGHL50T65SQD 50T65SQD 50T65 IGBT 50A 650V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET

Features:

  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5uS
  • Designed for :
  • – Frequency Converters
  • – Uninterrupted Power Supply
  • TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
  • – very tight parameter distribution
  • – high ruggedness, temperature stable behavior
  • – very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1
  • for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models





  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5uS
  • Designed for :
  • – Frequency Converters
  • – Uninterrupted Power Supply
  • TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
  • – very tight parameter distribution
  • – high ruggedness, temperature stable behavior
  • – very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1
  • for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models
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