Description: 2SB649 PNP Bipolar Transistor B649 649 2SB649 Transistors
2SB649 PNP Bipolar Transistor B649 649 2SB649 Transistors
Specifications:
- Type Designator: 2SB649
- Material of Transistor: Si
- Type –PNP
- Collector-Emitter Voltage:-120V
- Collector-Base Voltage:-180V
- Emitter-Base Voltage:-5V
- Collector Current:-1.5A
- Collector Dissipation –20W
- DC Current Gain (hfe) –60to320
- Transition Frequency –140MHz
- Operating and Storage Junction Temperature Range-55 to +150°C
- Package –TO-126
- Type Designator: 2SB649
- Material of Transistor: Si
- Type – PNP
- Collector-Emitter Voltage: -120 V
- Collector-Base Voltage: -180 V
- Emitter-Base Voltage: -5 V
- Collector Current: -1.5 A
- Collector Dissipation – 20 W
- DC Current Gain (hfe) – 60 to 320
- Transition Frequency – 140 MHz
- Operating and Storage Junction Temperature Range -55 to +150 °C
- Package – TO-126
Customer Questions and answers :
Login to ask a question