Description: 2SD669A Bipolar Transistor

2SD669A 2SD669 D669 669 NPN Transistor 160V 1.5A 20W Silicon Bipolar Power Transistors Triode TO-126 Package 3 Pin Leads

Characteristics of 2SD669A-C Transistor

Type - NPN

Collector-Emitter Voltage: 160 V

Collector-Base Voltage: 180 V

Emitter-Base Voltage: 5 V

Collector Current: 1.5 A

Collector Dissipation - 20 W

DC Current Gain (hfe) - 100 to 200

Transition Frequency - 140 MHz

Operating and Storage Junction Temperature Range -55 to +150 °C

Package - TO-126

• Type – NPN
• Collector-Emitter Voltage: 160 V
• Collector-Base Voltage: 180 V
• Emitter-Base Voltage: 5 V
• Collector Current: 1.5 A
• Collector Dissipation – 20 W
• DC Current Gain (hfe) – 60 to 200
• Transition Frequency – 140 MHz
• Operating and Storage Junction Temperature Range -55 to +150 °C
• Package – TO-126