Description: 2SA1013 NPN Transistor 160V
Specification:
- Type Designator: 2SA1013
- Material of transistor: Si
- Polarity: PNP
- Maximum collector power dissipation (Pc), W: 0.9
- Maximum collector-base voltage |Ucb|, V: 160
- Maximum collector-emitter voltage |Uce|, V: 160
- Maximum emitter-base voltage |Ueb|, V: 6
- Maximum collector current |Ic max|, A: 2
- Maksimalna temperatura (Tj), °C: 125
- Transition frequency (ft), MHz: 15
- Collector capacitance (Cc), pF: 35
- Forward current transfer ratio (hFE), min: 60
- Noise Figure, dB: -
- Type Designator: 2SA1013
- Material of transistor: Si
- Polarity: PNP
- Maximum collector power dissipation (Pc), W: 0.9
- Maximum collector-base voltage Ucb, V: 160
- Maximum collector-emitter voltage Uce, V: 160
- Maximum emitter-base voltage Ueb, V: 6
- Maximum collector current Ic max, A: 2
- Maksimalna temperatura (Tj), °C: 125
- Transition frequency (ft), MHz: 15
- Collector capacitance (Cc), pF: 35
- Forward current transfer ratio (hFE), min: 60
- Noise Figure, dB: -
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