Description: BF494 NPN Medium Frequency Transistor
BF494are NPN silicon Planar Epitaxial Transistors forRFsmall signal applications upto 100 Mhz.
Specifications:
- Collector-Emitter Volt (Vceo): 20V
- Collector-Base Volt (Vcbo): 30V
- Collector Current (Ic): 0.03A
- hfe: 35-125 @ 1mA
- Power Dissipation (Ptot): 300mW
- Current-Gain-Bandwidth (ftotal): 120MHz
- Type: PNP
- Collector-Emitter Volt (Vceo): 20V
- Collector-Base Volt (Vcbo): 30V
- Collector Current (Ic): 0.03A
- hfe: 35-125 @ 1mA
- Power Dissipation (Ptot): 300mW
- Current-Gain-Bandwidth (ftotal): 120MHz
- Type: PNP
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