Description: 1N-5822 30V 3A Schottky Barrier Diode

Employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low–voltage, high–frequency inverters, free wheeling diodes, and polarity protection diodes.

Features:

• Extremely Low vF
• Low Power Loss/High Efficiency
• Low Stored Charge, Majority Carrier Conduction

Mechanical Characteristics:

• Case: Epoxy, Molded
• Weight: 1.1 gram (approximately)
• Finish: All External Surfaces Corrosion Resistant and Terminal Leads are

Readily Solderable

• Lead and Mounting Surface Temperature for Soldering Purposes: 220°C

Max. for 10 Seconds, 1/16″ from case

• Shipped in plastic bags, 5,000 per bag
• Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the

part number

• Polarity: Cathode indicated by Polarity Band
• Marking: 1N5822

• Product Name : Rectifier Diodes;
• Model : 1N5822
• Mounting Type: Through Hole
• Color : Black, Silver Tone
• Package:DO-201AD
• Peak Repeat. Reverse Voltage (Vrm): 40V.
• Max. RMS Reverse Voltage (Vr): 28V.
• Average Rectified Current (Io): 3.0A.
• Max. Reverse Current (Ir): 2.0mA.
• Max. Forward Voltage Drop (Vf): 0.525V.
• Weight :0.33 grams