60F30A MOSFET 60F30 Transistor 300V 60A TO-3P 3 Pin Leads Diode Switching Power Supply Transistor MOSFET


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  • Manufacturer country: China
  • Transistor type: IGBT Mosfet
  • Model: RJH60F7
  • Body material: Plastic Steel
  • Maximum allowable collector-emitter voltage: 300 V
  • Maximum allowable gate-source voltage: 30 in
  • Maximum permissible collector current: 60 A
  • Maximum power dissipation: 260.4 Watt
  • Switch-on time: 0.05 μs
  • Shutdown time: 0.11 μs
  • Mounting type: Plug-in



Description: 60F30A 60F30 6030 300V 60A TO-3P Diode Switching Power Supply Transistor MOSFET High Speed Power Inverter

60F30A 60F30 6030 300V 60A TO-3P Diode Switching Power Supply Transistor MOSFET High Speed Power Inverter

Specifications:

  • Manufacturer country: China
  • Transistor type: IGBT Mosfet
  • Model: RJH60F7
  • Body material: Plastic Steel
  • Maximum allowable collector-emitter voltage: 300 V
  • Maximum allowable gate-source voltage: 30 in
  • Maximum permissible collector current: 60 A
  • Maximum power dissipation: 260.4 Watt
  • Switch-on time: 0.05 μs
  • Shutdown time: 0.11 μs
  • Mounting type: Plug-in





  • Manufacturer country: China
  • Transistor type: IGBT Mosfet
  • Model: RJH60F7
  • Body material: Plastic Steel
  • Maximum allowable collector-emitter voltage: 300 V
  • Maximum allowable gate-source voltage: 30 in
  • Maximum permissible collector current: 60 A
  • Maximum power dissipation: 260.4 Watt
  • Switch-on time: 0.05 μs
  • Shutdown time: 0.11 μs
  • Mounting type: Plug-in
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