Description: 23N50E Mosfet Transistor IC 23N50E TO-3P Diode
FMH23N50E 23N50E 23N50 2350 Mosfet Transistor IC 23N50E TO-3P Diode
Features:
1. Maintains both low power loss and low noise2. Lower RDS(on) characteristic3. More controllable switching dv/dt by gate resistance4. Smaller VGSringing waveform during switching5. Narrow band of the gate threshold voltage (3.0±0.5V)6. High avalanche durability
Applications:
1. Switching regulators2. UPS (Uninterruptible Power Supply)3. DC-DC convertersRelated products:FQA38N30-TO-247,IRF150N,FGH60N60,HY3410 TO-220,11N120ND TO-247,IRF264N
- Maintains both low power loss and low noise
- Lower RDS(on) characteristic
- More controllable switching dv/dt by gate resistance
- Smaller VGSringing waveform during switching
- Narrow band of the gate threshold voltage (3.0±0.5V)
- High avalanche durability
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