Description: Orginal 2SK3878 TO-3P 9A 900V N-Channel Field Effect

Orginal K3878 2SK3878 3878 TO-3P 9A 900V N-Channel Field Effect Transistor Silicon N-Channel Power MOSFET Transistor

This is Silicon N-Channel MOS Field Effect Transistor.

Features for K3878:

1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)

2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)

3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

Specification:

1. Drain-source voltage : VDSS = 900 V2. Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V3. Gate-source voltage : VGSS = ±30 V4. Drain current DC : ID = 9, Pulse : IDP = 27 A5. Drain power dissipation (Tc = 25°C) : PD = 150 W6. Single pulse avalanche energy : EAS = 778 mJ7. Avalanche current : IAR = 9 A8. Repetitive avalanche energy : EAR = 15 mJ9. Channel temperature : Tch = 150°C

Application:

1. Switching Regulator

• Drain-source voltage : VDSS = 900 V
• Drain-gate voltage (RGS = 20 kΩ) : VDGR = 900 V
• Gate-source voltage : VGSS = ±30 V
• Drain current DC : ID = 9, Pulse : IDP = 27 A
• Drain power dissipation (Tc = 25°C) : PD = 150 W
• Single pulse avalanche energy : EAS = 778 mJ
• Avalanche current : IAR = 9 A
• Repetitive avalanche energy : EAR = 15 mJ