Description: BS170 N-Channel Switching FET Transistor

BS170 BS-170 BS 170 60V 0.5A N-Channel Enhancement Mode Field Effect Transistor TO-92 Package Switching FET Triode Transistor

BS170 is a well-known N channel MOSFET manufactured in TO-92 package. It can be used for both switching and amplification purposes. When used as switch it can drive load of 500mA. It is able to perform fast switching and capable to switch load in around 7 nanoseconds due to which it can be used in high speed circuits. It can also perform well on low voltage due to which it is an ideal MOSFET to use in portable and battery operated applications.

Other than that it can also be used as an amplifier and you can use it in your audio amplifier circuits and also for any general purpose signal amplification requirements.

These N-Channel enhancement mode field effect transistors are produced using high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Technical Specifications:

Package Type: TO-92

Transistor Type: N Channel

Max Voltage Applied From Drain to Source: 60V

Max Gate to Source Voltage Should Be: ±20V

Max Continues Drain Current is : 500mA

Max Pulsed Drain Current is: 500mA

Max Power Dissipation is: 830mW

Minimum Voltage Required to Conduct: 0.8V

Max Storage & Operating temperature Should Be: -55 to +150 Celsius

Features:

High-speed switching

High input impedance

No minority carrier storage time

CMOS logic compatible input

Voltage controlled small signal switch.

Replacement and Equivalent:

2N7000, 2N7002, IRFZ44 (The pin configurations of the substitute MOSFETs shown here may be different from BS170, therefore it is recommended to check their pin configurations before replacing in your circuit).

Where We Can Use it & How to Use:

BS170 can be used for any general purpose switching and amplification purposes, it can be used as a switch to drive loads under 500mA which is enough drain current to drive most of the relays, lamps, LEDs etc. Additionally it can also be used at the output of microcontrollers and platforms like arduino and raspberry pi to drive loads.

On the other hand it can also be used as an audio amplifier, in audio amplifier stages, low level signal amplification etc. Wiring the MOSFETs are almost same as we wire BJT transistors. In MOSFETs the Gate is used to control the transistor where as in BJT it is Base, but the BJTs are current control devices and MOSFETs are voltage control devices. And the gate in MOSFETs requires small amount of voltage to control current through its Drain to Source.

Applications:

Fast Switching

Switching or driving loads under 500mA

Audio Amplification & Pre Amplification

Output of Microcontrollers

Output of ICs

Various type of signal amplification

How to Safely Long Run in a Circuit:

To get long term and stable performance from BS170 MOSFET in your circuits do not drive load of more than 60V and 500mA. The Gate to Source voltage should be under ±20V and do not operate and store the transistor in temperature below -55 Celsius and above +155 Celsius.

• Package Type: TO-92
• Transistor Type: N Channel
• Max Voltage Applied From Drain to Source: 60V
• Max Gate to Source Voltage Should Be: ±20V
• Max Continues Drain Current is : 500mA
• Max Pulsed Drain Current is: 500mA
• Max Power Dissipation is: 830mW
• Minimum Voltage Required to Conduct: 0.8V
• Max Storage & Operating temperature Should Be: -55 to +150 Celsius