Description: FGL60N100 BNTD G60N100BNTD G60N100 60N100NTD 60N100 60100 TO-264 1000V 60A TO-264 IGBT Switching Power N Channel Transistor Mosfet

IGBT 60N100 is a transistor with a quarantine control pole that is a 3-pole power semiconductor component. IGBT 60N100 combines MOSFET's fast switching ability and large load capacity of normal transistors. On the other hand, IGBT is also a voltage control element, so the required control capacity will be extremely small.

Features:

Part NO.:FGL60N100BNTDPackage:TO-264Description:IGBT N-CH 1000V 60A TO-264Supplier:SICSTOCKIGBT Type:NPT and TrenchVoltage - Collector Emitter Breakdown (Max):1000VVce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60ACurrent - Collector (Ic) (Max):60ACurrent - Collector Pulsed (Icm):200APower - Max:180WSwitching Energy:-Input Type:StandardGate Charge:275nCTd (on/off) @ 25°C:140ns/630nsTest Condition:600V, 60A, 51 Ohm, 15VReverse Recovery Time (trr):-Mounting Type:Through HoleSupplier Device Package:TO-264

• Part NO.:FGL60N100BNTD
• Package:TO-264
• Description:IGBT N-CH 1000V 60A TO-264
• Supplier:SICSTOCK
• IGBT Type:NPT and Trench
• Voltage - Collector Emitter Breakdown (Max):1000V
• Vce(on) (Max) @ Vge, Ic:2.9V @ 15V, 60A
• Current - Collector (Ic) (Max):60A
• Current - Collector Pulsed (Icm):200A
• Power - Max:180W
• Switching Energy:-
• Input Type:Standard
• Gate Charge:275nC
• Td (on/off) @ 25°C:140ns/630ns
• Test Condition:600V, 60A, 51 Ohm, 15V
• Reverse Recovery Time (trr):-
• Mounting Type:Through Hole
• Supplier Device Package:TO-264