Picture of GT50JR22 50JR22 5022 TO-3P TO247 IGBT 50A 600 V Transistor Mosfet
Picture of GT50JR22 50JR22 5022 TO-3P TO247 IGBT 50A 600 V Transistor Mosfet

GT50JR22 50JR22 5022 TO-3P TO247 IGBT 50A 600 V Transistor Mosfet

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  • Part NO.:GT50JR22
  • Package:TO-3P
  • Description: IGBT 50A 600 VTO-3P
  • IGBT Type: Field Stop
  • Voltage – Collector Emitter Breakdown (Max):1200V
  • Current – Collector (Ic) (Max):40A
  • Current – Collector Pulsed (Icm):120A
  • Switching Energy:1.08mJ
  • Input Type: Standard
  • Gate Charge:119nC
  • Td (on/off) @ 25°C:12ns/92ns
  • Reverse Recovery Time (trr):42ns
  • Mounting Type: Through Hole
  • Supplier Device Package:TO-3P

Call For Order : 09613-800800

Description: GT50JR22 50JR22 5022 TO-3P TO247 IGBT 50A 600 V Transistor Mosfet

GT50JR22 50JR22 5022 TO-3P TO247 IGBT 50A 600 V Transistor Mosfet

Features:

  • Part NO.:GT50JR22
  • Package:TO-3P
  • Description: IGBT 50A 600 VTO-3P
  • IGBT Type: Field Stop
  • Voltage – Collector Emitter Breakdown (Max):1200V
  • Current – Collector (Ic) (Max):40A
  • Current – Collector Pulsed (Icm):120A
  • Switching Energy:1.08mJ
  • Input Type: Standard
  • Gate Charge:119nC
  • Td (on/off) @ 25°C:12ns/92ns
  • Reverse Recovery Time (trr):42ns
  • Mounting Type: Through Hole
  • Supplier Device Package:TO-3P






  • Part NO.:GT50JR22
  • Package:TO-3P
  • Description: IGBT 50A 600 VTO-3P
  • IGBT Type: Field Stop
  • Voltage – Collector Emitter Breakdown (Max):1200V
  • Current – Collector (Ic) (Max):40A
  • Current – Collector Pulsed (Icm):120A
  • Switching Energy:1.08mJ
  • Input Type: Standard
  • Gate Charge:119nC
  • Td (on/off) @ 25°C:12ns/92ns
  • Reverse Recovery Time (trr):42ns
  • Mounting Type: Through Hole
  • Supplier Device Package:TO-3P
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