IG4BC30UD IGBT TO-220AB Insulated Gate Bipolar Transistor 4BC30 3 Pin Leads


Tk 252
Tk 297
Tk 297
15% OFF
  • ParametricIRG4BC30UD
  • Switching Frequency  Gen 4 8-30 kHz
  • Package  TO-220VCE 
  •  max600.0VIC (@ 100°)
  •  max12.0AIC (@ 25°)
  •  max23.0AI
  • Cpuls  max92.0A
  • Ptot  max100.0W
  • VCE(sat)  1.95V 
  • Eon  0.38mJ 
  • Eoff  0.16mJ 
  • td(on)  40.0ns
  •  tr  21.0ns 
  • td(off)  91.0ns 
  • tf  80.0ns 
  • QGate  50.0nC 
  • IF  max92.0A
  • VF  1.4V 
  • Qrr  80.0nC
  • Irrm  3.5A 
  • Ets    (max)0.54mJ  (0.9mJ)



Description: IRG4BC30UD IGBT TO-220AB

IRG4BC30UD IGBT TO-220AB Insulated Gate Bipolar Transistor 4BC30

Features:

ParametricIRG4BC30UD
Switching FrequencyGen 4 8-30 kHz
PackageTO-220
VCEmax600.0V
IC(@ 100°) max12.0A
IC(@ 25°) max23.0A
ICpulsmax92.0A
Ptotmax100.0W
VCE(sat)1.95V
Eon0.38mJ
Eoff0.16mJ
td(on)40.0ns
tr21.0ns
td(off)91.0ns
tf80.0ns
QGate50.0nC
IFmax92.0A
VF1.4V
Qrr80.0nC
Irrm3.5A
Ets (max)0.54mJ (0.9mJ)

Applications:

Pump

Solar

UPS

Welding

Package Include:

1 x IRG4BC30UD IGBT TO-220AB






  • ParametricIRG4BC30UD
  • Switching Frequency  Gen 4 8-30 kHz
  • Package  TO-220VCE 
  •  max600.0VIC (@ 100°)
  •  max12.0AIC (@ 25°)
  •  max23.0AI
  • Cpuls  max92.0A
  • Ptot  max100.0W
  • VCE(sat)  1.95V 
  • Eon  0.38mJ 
  • Eoff  0.16mJ 
  • td(on)  40.0ns
  •  tr  21.0ns 
  • td(off)  91.0ns 
  • tf  80.0ns 
  • QGate  50.0nC 
  • IF  max92.0A
  • VF  1.4V 
  • Qrr  80.0nC
  • Irrm  3.5A 
  • Ets    (max)0.54mJ  (0.9mJ)
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