IKW50N60 K50T60 50T60 5060 TO-247 600V 50A IGBT Switching Power N Channel Transistor Mosfet Electrical Circuitry & Parts

Description: K50T60 IGBT N-Channel 600V 50A

IKW50N60T K50T60 50N60 5060 TO-247 600V 50A IGBT Switching Power N Channel Transistor Mosfet

Features:

• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5uS
• Designed for :
• – Frequency Converters
• – Uninterrupted Power Supply
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
• – very tight parameter distribution
• – high ruggedness, temperature stable behavior
• – very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1
• for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models

Package Include:

• 1 x K50T60 IGBT N-Channel 600V 50A