IKW50T60 IGBT K50T60 IC 50T60 K50T60 IGBT 600V 50A IGBT N Channel Transistor Mosfet TO-247 3Pin Leads


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  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5uS
  • Designed for :
  • – Frequency Converters
  • – Uninterrupted Power Supply
  • TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
  • – very tight parameter distribution
  • – high ruggedness, temperature stable behavior
  • – very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1
  • for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models



Description: K50T60 IGBT N-Channel 600V 50A

IKW50N60T K50T60 50N60 5060 TO-247 600V 50A IGBT Switching Power N Channel Transistor Mosfet

Features:

  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5uS
  • Designed for :
  • – Frequency Converters
  • – Uninterrupted Power Supply
  • TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
  • – very tight parameter distribution
  • – high ruggedness, temperature stable behavior
  • – very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1
  • for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models






  • Very low VCE(sat) 1.5V (typ.)
  • Maximum Junction Temperature 175°C
  • Short circuit withstand time 5uS
  • Designed for :
  • – Frequency Converters
  • – Uninterrupted Power Supply
  • TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
  • – very tight parameter distribution
  • – high ruggedness, temperature stable behavior
  • – very high switching speed
  • Positive temperature coefficient in VCE(sat)
  • Low EMI
  • Low Gate Charge
  • Very soft, fast recovery anti-parallel Emitter Controlled HE diode
  • Qualified according to JEDEC1
  • for target applications
  • Pb-free lead plating; RoHS compliant
  • Complete product spectrum and PSpice Models
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