Description: IRF530 MOSFET 100V N-Channel

IRF530PBF IRF530 IRF 530 100V 14A 79W TO-220 N-Channel Power MOSFET 3 Pin IC Power Transistor Field Effect MOSFET IC Electronic Components

IRF530is an N-channel MOSFET designed for high-speed and high-power applications. It is compatible to sustain 14 A of continuous current with 100 V voltage. In pulse mode, it can drive a load up to 56 A. In this series, there are other transistors available with slightly different specifications like IRF531, IRF532, and IRF533.

The user can operate this MOSFET by the output of ICs and microcontrollers because it is designed to operate with a low gate driving current. This MOSFET can operate in the temperature range of -55˚C to +175 ˚C. It is more popular in industries due to its low cost and ruggedized design. It also features low-on-state resistance and fast switching.

For long-life performance, all components use at least 20% below their maximum limit. The maximum operating current of IRF530 is 14 A.Hence, for a better life, it must be operating around 11.2A current and load voltage below 80V.

IRF530 Pinout Description:

Features:

• Dynamic dv/dt rating
• Fast switching
• Ease of paralleling
• Required simple drive circuit
• Repetitive avalanche rated
• Maximum Drain-to-source voltage VDS: 100V
• Maximum continuous drain current ID: 14A
• Pulse drain current: 56A
• Maximum power dissipation: 88W
• Maximum gate-to-source voltage: ±20V
• Peak diode recovery dv/dt: 5.5V/ns
• On-state resistance: 0.16Ω
• Total gate charge Qg: 26nC
• Operating junction and storage temperature range: -55˚C to +175˚C
• Package: TO-220AB
• Transistor Polarity: N-channel

Technical Specifications:

• Package Type:TO-220AB And Other Packages
• Transistor Type:N Channel
• Max Voltage Applied From Drain to Source:100V
• Max Gate to Source Voltage Should Be: ±20V
• Max Continues Drain Current is :14A
• Max Pulsed Drain Current is:56A
• Max Power Dissipation is:79W
• Minimum Voltage Required to Conduct:2V to 4V
• Max Storage & Operating temperature Should Be:-55 to +150 Centigrade

IRF530 Equivalent:

IRF641, IRF642, IRFB4620, IRFB5620, IRFI530G, IRFS530, BUZ20

Note:More technical specifications can be found in theIRF530 datasheetattached at the end of this page.

Switching Characteristics:

• Turn-on delay time td(on): 10ns
• Rise time tr: 34ns
• Turn-off delay time td(off): 23ns
• Fall time tf: 24ns

Working of IRF530 N-channel MOSFET

Here we will use IRF530 to run a DC motor. In this circuit diagram, a variable resistance is used to control the speed of the DC motor. A DC motor is connected between the drain and source terminals of IRF530. This simulation is done in proteus. With help of variable resistance, we can set the resistance between gate to drain.

The speed of the motor is proportional to the current that passes through the motor (the drain-to-source current or drain currentpasses through the motor). As the resistance increases, drain currentand speed decrease. Similarly, as the resistance decreases, drain current increases and speed also increases.

Applications:

• Battery management system and battery chargers
• Motor drives
• Solar power supply applications
• UPS
• DC-DC and DC-AC Converters
• Regulators
• Audio amplifier
• Solenoid and relay drivers

• Dynamic dv/dt rating
• Fast switching
• Ease of paralleling
• Required simple drive circuit
• Repetitive avalanche rated
• Maximum Drain-to-source voltage VDS: 100V
• Maximum continuous drain current ID: 14A
• Pulse drain current: 56A
• Maximum power dissipation: 88W
• Maximum gate-to-source voltage: ±20V
• Peak diode recovery dv/dt: 5.5V/ns
• On-state resistance: 0.16Ω
• Total gate charge Qg: 26nC
• Package: TO-220AB
• Transistor Polarity: N-channel