Description: IRF740 MOSFET IRF 740 400V 10A N-Channel Power MOSFET TO-220 Package THT 3 Pin MOSFET Transistor

TheIRF740 is an N-ChannelPower MOSFET that can switch loads upto 400V. This Mosfet could switch loads that use upto 10A, it can turn on by provide a gate threshold voltage of 10V across the Gate and Source pin. Since the IRF740 mosfet is for switching high current high voltage loads it has a relative high gate voltage, Hence, cannot be used directly with a I/O pin of a CPU. If you prefer a mosfet with low gate voltage then try IRF520 or BSS138 etc.

One significant disadvantage of this Mosfet is its high on-resistance (RDS) cost which is about 0.55 ohms. But the IRF740 mosfet cannot be used in applications where high switching efficiency is required. The Mosfet requires a driver circuit to provide 10volt to the gate pin of this Mosfet the easiest driver circuit can be make using a transistor. This is comparatively cheap and has very low thermal resistance, added to this mosfet also has very good switching speeds and consequently can be used in DC-DC converter circuits.

Features:

• Drain-Source Volt (Vds): 400V
• Drain-Gate Volt (Vdg): 400V
• Gate-Source Volt (Vgs): 20V
• Drain Current (Id): 10A
• Power Dissipation (Ptot): 125W
• Type: N-Channel

Specification:

• Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
• N-Channel Power MOSFET
• Continuous Drain Current (ID): 10A
• Drain Source Resistance (RDS) is
• Drain to Source Breakdown Voltage: 40
• Available in To-220
• Rise time and fall time is 27nS and 24ns

Alternate of IRF740

The Alternate of IRF740 are:IRFB13N50A, UF450A, SSF13N15,BSS138, IRF520,IRF3205, 2N7002, BS170, IRF1010E, BSS123

Applicationsof IRF740

• LED dimmers or flashers
• DC-DC Converters
• High Speed switching applications
• Switching high power devices
• Inverter Circuits
• Control speed of motors

Package Include:

• 1 x IRF740 MOSFET IRF 740 400V 10A N-Channel Power MOSFET TO-220 Package THT 3 Pin MOSFET Transistor

•  Gate threshold voltage (VGS-th) is 10V (limit = ±20V)
•  N-Channel Power MOSFET
• Continuous Drain Current (ID): 10A
• Drain Source Resistance (RDS) is
• Drain to Source Breakdown Voltage: 40
• Available in To-220
• Rise time and fall time is 27nS and 24ns