IRFP250 MOSFET Transistor IRFP250 Transistor 30A 200V N-Channel Power MOSFET TO-247 3 Pin Leads IRFP250N MOSFET - Multi Plug - Multi Plug


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  • Drain-Source Volt (Vds): 200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 30A
  • Power Dissipation (Ptot): 180W
  • Type: N-Channel
  • #multi plug
  • #multi plug



Description: IRFP250 IRFP250N 30A 200V N-Channel Power MOSFET Transistor TO-247 IRFP 250

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.

Specification:

  • Advanced Process Technology
  • Dynamic dv/dt Rating
  • 175°C Operating Temperature
  • Fast Switching
  • Fully Avalanche Rated
  • Ease of Paralleling
  • Simple Drive Requirements

Features:

  • Drain-Source Volt (Vds): 200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 30A
  • Power Dissipation (Ptot): 180W
  • Type: N-Channel

Package Include:

  • 1 x IRFP250 IRFP250N 30A 200V N-Channel Power MOSFET Transistor TO-247 IRFP 250






  • Drain-Source Volt (Vds): 200V
  • Gate-Source Volt (Vgs): 20V
  • Drain Current (Id): 30A
  • Power Dissipation (Ptot): 180W
  • Type: N-Channel
  • #multi plug
  • #multi plug
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