Description: IRFP450 MOSFET N-Channel.

IRFP450NPBF IRFP450N IRFP450 IRFP 450 Power MOSFET 500V 14A 190W N-Channel TO-247 HEXFET Power Transistor MOSFET 3 Pin IC MOS Field Effect IC Electronic Components

This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Specifications:

• Drain-Source Volt (Vds): 500V
• Gate-Source Volt (Vgs): 20V
• Drain Current (Id): 14A
• Power Dissipation (Ptot): 190W
• Type: N-Channel

IRF450 Pin Configuration

IRFP450 Key Features

• 14A, 500V, RDS(on) = 0.39Ω @VGS = 10 V
• Low gate charge ( typical 87 nC)
• Low Cross ( typical 60 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• Type Designator: IRFP450
• Type of Transistor: MOSFET
• Type of Control Channel: N -Channel

IRFP450 Specification

IRFP450 Equivalent/Alternative

• IRF044, IRF044SMD, IRF054, IRF054SMD, IRF100B201

Application

• Switch Mode Power Supply (SMPS)
• Uninterruptible Power Supply
• High Speed Power Switching

• Drain-Source Volt (Vds): 500V
• Gate-Source Volt (Vgs): 20V
• Drain Current (Id): 14A
• Power Dissipation (Ptot): 190W
• Type: N-Channel