Description: K50DDTP IGBT 50A 600V IGBT Transistor
K50DDTP 50DDTP K50DD IGBT 50A 600V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET
Features:
- Very low VCE(sat) 1.5V (typ.)
- Maximum Junction Temperature 175°C
- Short circuit withstand time 5uS
- Designed for :
- – Frequency Converters
- – Uninterrupted Power Supply
- TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- – very tight parameter distribution
- – high ruggedness, temperature stable behavior
- – very high switching speed
- Positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1
- for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models
- Very low VCE(sat) 1.5V (typ.)
- Maximum Junction Temperature 175°C
- Short circuit withstand time 5uS
- Designed for :
- – Frequency Converters
- – Uninterrupted Power Supply
- TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- – very tight parameter distribution
- – high ruggedness, temperature stable behavior
- – very high switching speed
- Positive temperature coefficient in VCE(sat)
- Low EMI
- Low Gate Charge
- Very soft, fast recovery anti-parallel Emitter Controlled HE diode
- Qualified according to JEDEC1
- for target applications
- Pb-free lead plating; RoHS compliant
- Complete product spectrum and PSpice Models
Customer Questions and answers :
Login to ask a question