NCE80TD60BT Transistor NCE80TD60 Transistor IC 80TD60 IGBT 80A 600V IGBT Transistor TO-247 3 Pin Leads Switching Power N-Channel Transistor NCE80TD60 MOSFET

Description: NCE80TD60BT  IGBT Transistor TO-247 

NCE80TD60BT NCE80TD60 80TD60 IGBT 80A 600V IGBT Transistor TO-247 Switching Power N-Channel Transistor MOSFET

Features:

• Very low VCE(sat) 1.5V (typ.)
• Maximum Junction Temperature 175°C
• Short circuit withstand time 5uS
• Designed for :
• – Frequency Converters
• – Uninterrupted Power Supply
• TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
• – very tight parameter distribution
• – high ruggedness, temperature stable behavior
• – very high switching speed
• Positive temperature coefficient in VCE(sat)
• Low EMI
• Low Gate Charge
• Very soft, fast recovery anti-parallel Emitter Controlled HE diode
• Qualified according to JEDEC1
• for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models