Description: P55NF N-Channel MOSFET

This Power MOSFET is the latest development of STMicroelectronics unique “Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Specification:

• Drain-source voltage (VGS = 0) 60 V
• Gate-source voltage ± 16 V
• Drain current (continuous) at TC = 25°C 55 A
• Drain current (continuous) at TC = 100°C 39 A
• Total dissipation at TC = 25°C 95 W

Application:

• LOW VOLTAGE DC-DC CONVERTERS
• HIGH CURRENT, HIGH SPEED SWITCHING
• HIGH EFFICIENCY SWITCHING CIRCUITS

• Drain-source voltage (VGS = 0) 60 V
• Gate-source voltage ± 16 V
• Drain current (continuous) at TC = 25°C 55 A
• Drain current (continuous) at TC = 100°C 39 A
• Total dissipation at TC = 25°C 95 W