Descriptions: RJH60F5 60F5 RJH60F5DPQ 80A IGBT 600V TO-247 Switching Power Supply NPT Transistor Mosfet
Specifications:
Manufacturer country:China
Transistor type:IGBT Mosfet
Model: RJH60F5
Body material:Plastic Steel
Maximum allowable collector-emitter voltage:600 V
Maximum allowable gate-source voltage:30 in
Maximum permissible collector current:40 A
Maximum power dissipation:260.4 Watt
Switch-on time:0.05 μs
Shutdown time:0.11 μs
Mounting type:Plug-in
Package Include:
1 x RJH60F5 60F5 RJH60F5DPQ 80A IGBT 600V TO-247 Switching Power Supply NPT Transistor Mosfet
- Manufacturer country: China
- Transistor type: IGBT Mosfet
- Model: RJH60F5
- Body material: Plastic Steel
- Maximum allowable collector-emitter voltage: 600 V
- Maximum allowable gate-source voltage: 30 in
- Maximum permissible collector current: 40 A
- Maximum power dissipation: 260.4 Watt
- Switch-on time: 0.05 μs
- Shutdown time: 0.11 μs
- Mounting type: Plug-in
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