Description: RJH60F7 60F7 RJH60F7DPQ RJH60F7DPQ-AO 80A IGBT 600V TO-247 Switching Power Supply NPT Transistor
Specifications:
Manufacturer country:China
Transistor type:IGBT Mosfet
Model: RJH60F7
Body material:Plastic Steel
Maximum allowable collector-emitter voltage:600 V
Maximum allowable gate-source voltage:30 in
Maximum permissible collector current:40 A
Maximum power dissipation:260.4 Watt
Switch-on time:0.05 μs
Shutdown time:0.11 μs
Mounting type:Plug-in
Package Include:
1 x RJH60F7 60F7 RJH60F7DPQ RJH60F7DPQ-AO 80A IGBT 600V TO-247 Switching Power Supply NPT Transistor
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