Picture of RJH60F7 IC RJH60F7 Mosfet 60F7 RJH60F7DPQ RJH60F7DPQ-AO 80A RJH60F7 IGBT 600V TO-247 Transistor 3 Pin Leads
Picture of RJH60F7 IC RJH60F7 Mosfet 60F7 RJH60F7DPQ RJH60F7DPQ-AO 80A RJH60F7 IGBT 600V TO-247 Transistor 3 Pin Leads

RJH60F7 IC RJH60F7 Mosfet 60F7 RJH60F7DPQ RJH60F7DPQ-AO 80A RJH60F7 IGBT 600V TO-247 Transistor 3 Pin Leads

Category: Building Materials
SKU: UDBD05672
Seller: Udvabony BD
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  • Manufacturer country: China
  • Transistor type: IGBT Mosfet
  • Model: RJH60F7
  • Body material: Plastic Steel
  • Maximum allowable collector-emitter voltage: 600 V
  • Maximum allowable gate-source voltage: 30 in
  • Maximum permissible collector current: 40 A
  • Maximum power dissipation: 260.4 Watt
  • Switch-on time: 0.05 μs
  • Shutdown time: 0.11 μs
  • Mounting type: Plug-in

Call For Order : 09613-800800

Description: RJH60F7 60F7 RJH60F7DPQ RJH60F7DPQ-AO 80A IGBT 600V TO-247 Switching Power Supply NPT Transistor

Specifications:

Manufacturer country:China
Transistor type:IGBT Mosfet
Model: RJH60F7
Body material:Plastic Steel
Maximum allowable collector-emitter voltage:600 V
Maximum allowable gate-source voltage:30 in
Maximum permissible collector current:40 A
Maximum power dissipation:260.4 Watt
Switch-on time:0.05 μs
Shutdown time:0.11 μs
Mounting type:Plug-in






  • Manufacturer country: China
  • Transistor type: IGBT Mosfet
  • Model: RJH60F7
  • Body material: Plastic Steel
  • Maximum allowable collector-emitter voltage: 600 V
  • Maximum allowable gate-source voltage: 30 in
  • Maximum permissible collector current: 40 A
  • Maximum power dissipation: 260.4 Watt
  • Switch-on time: 0.05 μs
  • Shutdown time: 0.11 μs
  • Mounting type: Plug-in
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