Description: TIP35C NPN Power Amplifier Transistor 100V 25A 125W TO-247 Package TIP 35C Bipolar Transistor

TIP35C is a three layer NPN device within the working range, the collector current IC is a function of the base current IB, a change in the base current giving a corresponding amplified change in the collector current for a given collector emitter voltage VCE.

Specifications:

• Collector-Emitter Volt (Vceo): 100V
• Collector-Base Volt (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA
• Power Dissipation (Ptot): 125W
• Current-Gain-Bandwidth (ftotal): 3MHz
• Type: NPN

Features:-

• Low saturation voltage
• Simple drive requirements
• High safe operating area
• For low distortion complementary designs
• Easy to carry and handle

• Collector-Emitter Volt (Vceo): 100V
• Collector-Base Volt (Vcbo): 100V
• Collector Current (Ic): 25.0A
• hfe: 15-75 @ 3000mA
• Power Dissipation (Ptot): 125W
• Current-Gain-Bandwidth (ftotal): 3MHz
• Type: NPN